mGFET-4D for Sensing applications

mGFET-4D (4 mm x 4 mm)  - Processed in Clean Room Class 1000

The mGFET 4x4 chip from Graphenea is designed for sensing applications, and it is compatible with measurements in a liquid medium. The metal pads are passivated to avoid degradation and reduce leakage currents. It also includes a non-encapsulated electrode at the center of the chip, which allows for liquid gating without the need of an external gate electrode (such as Ag/AgCl probes). This device architecture enhances signal-to-noise ratio and reduces parasitics.
This version provides 28 graphene graphene channels: 7 of them are one-channel devices and 7 of them are three-channel devices. These two geometries add flexibility to the measurement scheme (ΔVD or ΔIsd). The die is packaged and wirebonded to a leadless chip carrier (LCC) and it is fully compatible with the Graphenea Card

Typical Specifications

  • · Growth method: CVD synthesis 
  • · Graphene transfer: Polymer assisted transfer
  • · Substrate: Si/SiO2
  • · Substrate thickness: 525 μm
  • · Resistivity of Si substrate: 1-10 Ω.cm
  • · Gate oxide thickness: 90 nm
  • · Metallization: 50nm Au-based Contacts
  • · Encapsulation: 50 nm Al2O3
  • · Chip dimensions: 4 mm x 4 mm
  • · Number of GFETs per chip: 14
  • · Number of graphene channels per chip: 28
  • · Optical Yield: ≥75
  • · Average field-effect mobility (back gating): >1000 cm2/V.s
  • · Average Dirac point (back gating): <25 V
  • · Average Dirac point (liquid gating): <1.5 V

Absolute maximum ratings

  • · Maximum gate-source voltage (liquid gating in PBS): ± 2V
  • · Maximum temperature rating: 150 °C
  • · Maximum drain-source current density: 107A.cm-2


Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality products.

  • · Optical Microscopy inspection of all the devices
  • · Raman spectroscopy of each fabrication batch
  • · Electrical characterisation (back gating and liquid gating) of each fabrication batch
  • · AFM of each fabrication batch


Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications.  Depending on the application, mGFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, chemical/gas sensing, biosensors, chemical sensors, bioelectronics, healthcare and industrial safety applications.


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