Monolayer Graphene on Si3N4 (10 mm x 10 mm)

Monolayer Graphene film on Si₃N₄(10 mm x 10 mm) - Processed in ISO 7 Cleanroom

Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si₃N₄substrate using wet transfer process.

This product is ideal for R&D departments and universities.

Graphene Film

· Transparency: > 97 %
· Coverage: > 95%
· Polymer assisted transfer
· Thickness (theoretical): 0.345 nm
· Hall Electron Mobility on Si₃N₄: 1432±428 cm2/Vs
· Sheet Resistance: 576±172 Ohms/sq (1cm x1cm)
· Grain size: Up to 20 μm

Substrate Si₃N₄

· 150nm of Si₃N₄ deposited by LPCVD on Si
· Type/Dopant: P/Bor
· Orientation: <100>
· Resistivity: 10-20 ohm.cm
· Thickness: 725 +/- 25 μm
· Front surface: Single Side Polished
· Back Surface: Etched
· Particles: <10@0.3 μm

Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene.

· Raman Spectroscopy on each batch: I(G)/I(2D)<1; I(D)/I(G)<0.1
· Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific quality control (AFM, SEM...) , please do not hesitate to contact us.

Applications

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics. Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS