GFET-S12 for Sensing applications

GFET-S12 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000


The GFET-S12 chip from Graphenea provides 27 graphene devices distributed in a grid pattern on the chip. The devices have interdigitated contacts on top of the graphene channel, which are optimal for sensing of gases and volatile compounds. All the devices have the same channel length (1mm), but 3 different widths (50µm, 100µm and 200µm). The interdigitated contacts have 3 different gaps (8µm, 15µm and 25µm). These different graphene channel dimensions allow investigation of geometry dependence on device properties, enabling immediate device optimization.

Typical Specifications

  • · Growth method: CVD synthesis
  • · Graphene transfer: Polymer assisted transfer
  • · Substrate: Si/SiO2
  • · Substrate thickness: 675 μm
  • · Resistivity of Si substrate: 1-10 Ω.cm
  • · Gate oxide thickness: 90 nm
  • · Metallization: 50nm Au-based Contacts
  • · Chip dimensions: 10 mm x 10 mm
  • · Number of GFETs per chip:  27
  • · Optical Yield: ≥75
  • · Average field-effect mobility: >1000 cm2/V·s
  • · Average Dirac point: <25 V

Absolute maximum ratings

  • · Maximum gate-source voltage (back gating): ± 50V
  • · Maximum temperature rating: 150 °C
  • · Maximum drain-source current density: 107A.cm-2

Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality products.

  • · Optical microscopy inspection of all the devices
  • · Raman Spectroscopy of each fabrication batch
  • · Electrical characterization via back gating of each fabrication batch


Graphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications.  Depending on the application, GFETs can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, quantum transport, gas sensors and chemical sensors.


"Graphene field effect transistors on flexible substrate: Stable process and high RF performance"

"High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide"
Scientific Reports volume 7, Article number 2419 (2017doi:10.1038/s41598-017-02541-2


  •   GFET-S12 Data Sheet   
  •   Measurements Protocol and Basic Handling Instructions

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