Multilayer Graphene on SiO₂/Si, Quartz or PET (non AB Bernal stacking)
Processed in ISO 7 Cleanroom
The bilayer and trilayer graphene product consists of CVD layers produced by multiple transfer on a SiO2/Si, Quartz or PET substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.
Graphene Film
- · Polymer assisted transfer
- · Transparency: >94 %
- · Color: Transparent
- · Coverage: >97%
- · Number of graphene layers: 2 or 3
- · Thickness (theoretical):
- - 2 layer: 0.69 nm
- - 3 layer: 1.035 nm
- · Sheet resistance:
- - 2 layer: 188±3 Ohms/sq (1cm x 1cm)
- - 3 layer: 126±6 Ohms/sq (1cm x 1cm)
- · Grain size: Up to 20 μm
Substrate SiO2/Si
- · Dry Oxide Thickness: 90 nm (+/-5%)
- · Type/Dopant: P/Bor
- · Orientation: <100>
- · Resistivity: 1-10 ohm·cm
- · Thickness: 525 +/- 20 μm
- · Front surface: Single Side Polished
- · Back Surface: Etched
- · Particles: <10@0.3 μm
Substrate PET
- · Thickness: 250 μm
Substrate Quartz
- · Thickness: 500 μm
Applications
Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility.
- · Transparent conductors in OLEDs, LEDs, solar cells, etc...
- · Graphene transistors and electronic applications
If your application requires more specific quality control, please do not hesitate to contact us.