Graphene Film

• · Growth method: CVD synthesis
• · Polymer assisted transfer
• · Appearance (color): Transparent
• · Transparency: > 97%
• · Coverage: > 95%
• · Number of graphene layers: 1
• · Thickness (theoretical): 0.345 nm
• · AFM Thickness (air @RT): <1nm
• · Electron Mobility on SiO₂/Si: ≈1500 cm²/V·s
• · Sheet Resistance on SiO₂/Si: 350±40 Ohms/sq (1cm x1cm)
• · Grain size: Up to 20 μm

Substrate SiO₂/Si 

• · Dry Oxide Thickness (both sides): 90 nm (+/-5%)
• · Type/Dopant: P/B
• · Orientation: <100>
• · Resistivity 4" and 6" wafer: 1-10 ohm·cm
• · Thickness 4" wafer: 525 +/- 20 μm
• · Thickness 6" wafer: 675 +/- 20 μm
• · Resistivity 8" wafer: 1-100 ohm·cm
• · Thickness 8" wafer: 725 +/- 25 μm
• · Front surface: Polished
• · Dielectric Constant of the SiO2 layer: 3.9

Quality control

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene. All our CVD materials are processed in ISO 7 Cleanroom. Each batch must pass the following tests:

• · Raman Spectroscopy on each batch: I(G)/I(2D)<1; I(D)/I(G)<0.1 on 90nm SiO2/Si substrate.
• · Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific controls (AFM, SEM...) please do not hesitate to contact us.

Applications

Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics, Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS